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2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 01 -- 22 April 2005 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: 2PB1424.
1.2 Features
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1: Symbol VCEO ICM hFE Quick reference data Parameter collector-emitter voltage peak collector current DC current gain Conditions open base single pulse; tp 1 ms VCE = 2 V; IC = 0.1 A Min 180 Typ Max 20 3 390 Unit V A
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description emitter collector base
3 2 1
3 1
sym042
Simplified outline
Symbol
2
3. Ordering information
Table 3: Ordering information Package Name 2PD2150 SC-62 Description plastic surface mounted package; collector pad for good heat transfer; 3 leads Version SOT89 Type number
4. Marking
Table 4: 2PD2150 Marking codes Marking code M2 Type number
9397 750 14987
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 22 April 2005
2 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation single pulse; tp 1 ms Tamb 25 C
[1] [2] [3]
Conditions open emitter open base open collector
Min -65 -65
Max 40 20 5 1 3 500 850 1200 150 +150 +150
Unit V V V A A mW mW mW C C C
Tj Tamb Tstg
[1] [2] [3]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
1600 Ptot (mW) 1200
(1)
006aaa449
(2)
800
(3)
400
0 -65
-35
-5
25
55
85
115 145 175 Tamb (C)
(1) FR4 PCB; mounting pad for collector 6 cm2 (2) FR4 PCB; mounting pad for collector 1 cm2 (3) FR4 PCB; standard footprint
Fig 1. Power derating curves
9397 750 14987
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 22 April 2005
3 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2] [3]
Min -
Typ -
Max 250 147 104 20
Unit K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3]
thermal resistance from junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 m2.
103 Zth(j-a) duty cycle = 1.00 0.50 0.20 10 0.10 0.05 0.02 0.01 1 0.00 0.75 0.33
006aaa450
(K/W)
102
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102
t p (s)
103
FR4 PCB; mounting pad for collector 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14987
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 22 April 2005
4 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7: Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance
Pulse test: tp 300 s; 0.02.
Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 2 V; IC = 0.1 A IC = 2 A; IB = 100 mA VCE = 10 V; IC = 5 mA VCE = 1 V; IC = 1 A IC = 500 mA; VCE = 2 V; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz
[1] [1]
Min 180 -
Typ 220 20
Max 0.1 10 0.1 390 0.5 0.7 1 -
Unit A A A
IEBO hFE VCEsat VBEon fT Cc
[1]
V V V MHz pF
9397 750 14987
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 22 April 2005
5 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
3 IB (mA) IC (A) 2
006aaa451
16
400 hFE 300
(2) (1)
006aaa452
14.4 12.8 11.2 9.6 8 6.4 4.8 200
(3)
1
3.2 100 1.6
0 0 1 2 3 4 VCE (V) 5
0 1 10
102
103 IC (mA)
104
Tamb = 25 C
VCE = 2 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 3. Collector current as a function of collector-emitter voltage; typical values
1 VCEsat (mV) 10-1
(1) (2)
Fig 4. DC current gain as a function of collector current; typical values
1 VCEsat (mV) 10-1
(1) (2) (3)
006aaa453
006aaa454
10-2
(3)
10-2
10-3 10-1
1
10
102
103 104 IC (mA)
10-3 10-1
1
10
102
103 104 IC (mA)
IC/IB = 10 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values
Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values
9397 750 14987
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 22 April 2005
6 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
8. Package outline
4.6 4.4 1.8 1.4
1.6 1.4
2.6 2.4
4.25 3.75 1.2 0.8 0.48 0.35 3 0.44 0.23 04-08-03
1 0.53 0.40 1.5 Dimensions in mm
2
3
Fig 7. Package outline SOT89 (SC-62/TO-243)
9. Packing information
Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package 2PD2150
[1]
Description 8 mm pitch, 12 mm tape and reel
Packing quantity 1000 4000 -135 -115
SOT89
For further information and the availability of packing methods, see Section 16.
9397 750 14987
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 22 April 2005
7 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
10. Soldering
4.75 2.25 2.00 1.90 1.20 solder lands 0.85 0.20 solder resist occupied area 1.20 4.60 0.50 1.20 1.20 1.70 solder paste 4.85
1.00 (3x)
3
2
1
msa442
0.60 (3x) 0.70 (3x) 3.70 3.95
SOT89 standard mounting conditions for reflow soldering Dimensions in mm
Fig 8. Reflow soldering footprint SOT89 (SC-62/TO-243)
11. Mounting
32 mm
10 mm
40 mm 2.5 mm
10 mm
1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm
001aab105
Fig 9. FR4 PCB; mounting pad for collector 1 cm2
9397 750 14987
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 22 April 2005
8 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9: Revision history Release date 20050422 Data sheet status Product data sheet Change notice Doc. number 9397 750 14987 Supersedes Document ID 2PD2150_1
9397 750 14987
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 22 April 2005
9 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
13. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
14. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
15. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14987
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 22 April 2005
10 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
17. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10
(c) Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 April 2005 Document number: 9397 750 14987
Published in The Netherlands

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